| Manufacturer | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Qualification | Power Dissipation (Max) | Grade | Operating Temperature | Mounting Style | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Qualification | Power Dissipation (Max) | Grade | Operating Temperature | Mounting Style | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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P3M06060G7SICFET N-CH 650V 44A TO-263-7 |
6,512 | - |
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Datasheet |
P3M | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 44A | 15V | 79mOhm @ 20A, 15V | 650 V | 2.2V @ 20mA (Typ) | - | +20V, -8V | - | - | - | 159W | - | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 |
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SCT4013DTWSiC FET Top Side Cooling |
3,523 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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